Alle Produkte
IS43DR16640C-25DBL IC DRAM 1GBIT PARALLEL 84TWBGA ISSI, integrierte Siliziumlösung Inc.
| Markenname | ISSI, Integrated Silicon Solution Inc |
|---|---|
| Modellnummer | IS43DR16640C-25DBL |
| Min Bestellmenge | 1 |
| Preis | Based on current price |
| Verpackung Informationen | Anti-statische Tasche und Karton |
| Lieferzeit | 3-5 Arbeitstage |
| Zahlungsbedingungen | T/T |
| Versorgungsmaterial-Fähigkeit | Vorräte |
Treten Sie mit mir für freie Proben und Kupons in Verbindung.
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xProduktdetails
| Gedächtnisart | Flüchtig | Gedächtnis-Format | D-RAM |
|---|---|---|---|
| Technologie | SDRAM-DDR2 | Speicherkapazität | 1Gbit |
| Speicherorganisation | 64M x 16 | Gedächtnis-Schnittstelle | Parallel |
| Taktfrequenz | 400 MHz | Schreibzyklus-zeit- Wort, Seite | 15ns |
| Zugriffzeit | 400 ps | Spannung - Versorgung | 1.7V ~ 1.9V |
| Betriebstemperatur | 0°C | 85°C (TC) | Typ der Montage | Oberflächenbefestigung |
| Packung / Gehäuse | 84-TFBGA | Lieferanten-Gerätepaket | 84-TWBGA (8x12.5) |
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| Part Number | Description | |
|---|---|---|
| IS43DR16320E-25DBL | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16640C-25DBL | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16640C-3DBLI | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16640C-25DBLI | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16128C-25DBLI | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS43DR16640C-3DBL | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16160B-37CBLI | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16320E-3DBL | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16160B-37CBL | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16320C-3DBL | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16640B-3DBL | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16320E-3DBLI | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16128C-25DBL | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS43DR16640B-3DBLI | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16128C-3DBL | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS43DR16160B-25DBL-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160B-3DBL-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16320D-25DBL-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320D-3DBL-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16160B-25DBL | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160B-3DBL | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160B-37CBL-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16320D-25DBL | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320D-3DBL | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320C-3DBL-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320C-25DBL-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320C-25DBL | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16160B-3DBLI-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160B-37CBLI-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160B-25DBLI-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16320E-3DBLI-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16640B-3DBL-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320E-25DBLA1-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320E-25DBLI-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16160B-3DBLI | IC DRAM 256MBIT PAR 84TWBGA | |
| IS46DR16320E-3DBLA1-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16160B-25DBLI | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16640C-3DBLI-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320E-25DBLA1 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16320E-25DBLA2-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320E-25DBLI | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16160B-3DBLA1-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16640C-25DBLI-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320E-3DBLA1 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16320E-3DBLA2-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320D-3DBLI-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16160B-25DBLA1-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS46DR16640C-3DBLA1-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16640C-25DBLA1-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16320C-3DBLI-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320D-25DBLI-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16320E-25DBLA2 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16160B-3DBLA1 | IC DRAM 256MBIT PAR 84TWBGA | |
| IS46DR16320D-3DBLA1-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320C-25DBLI-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16320E-3DBLA2 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16640C-3DBLA2-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320D-3DBLA2-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16160B-25DBLA1 | IC DRAM 256MBIT PAR 84TWBGA | |
| IS46DR16640C-3DBLA1 | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320D-25DBLA1-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320D-3DBLI | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16640C-25DBLA1 | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16160B-3DBLA2-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS46DR16640C-25DBLA2-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16320C-3DBLI | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320D-25DBLI | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16640B-3DBLI-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320D-3DBLA1 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16160B-25DBLA2-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16320C-25DBLI | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16640C-3DBLA2 | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16128C-3DBL-TR | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS46DR16320D-25DBLA1 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16320D-3DBLA2 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16320C-3DBLA1-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16160B-3DBLA2 | IC DRAM 256MBIT PAR 84TWBGA | |
| IS46DR16640C-25DBLA2 | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320C-25DBLA1-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16160B-25DBLA2 | IC DRAM 256MBIT PAR 84TWBGA | |
| IS46DR16320D-25DBLA2-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16320C-3DBLA1 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16640B-3DBLA1-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320C-25DBLA1 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16640B-25DBLA1-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320D-25DBLA2 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16640B-3DBLA1 | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320C-3DBLA2-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16640B-25DBLA1 | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320C-3DBLA2 | IC DRAM 512MBIT PAR 84TWBGA | |
| IS46DR16640B-3DBLA2-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16640B-25DBLA2-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16640B-3DBLA2 | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16640B-25DBLA2 | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16128C-3DBLI-TR | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS43DR16128C-25DBLI-TR | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS43DR16128C-3DBLI | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS46DR16128C-3DBLA1-TR | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS46DR16128C-3DBLA1 | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS46DR16128C-3DBLA2-TR | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS46DR16128C-3DBLA2 | IC DRAM 2GBIT PARALLEL 84TWBGA | |
| IS43DR16160A-37CBL | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-37CBLI | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16640A-3DBL | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16160A-25EBL | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-25EBLI | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-25EBLI-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-25EBL-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-37CBLI-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-37CBL-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-3DBI | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-3DBI-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-3DBL | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-3DBLI | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-3DBLI-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-3DBL-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-5BBLI | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16160A-5BBLI-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16320C-25DBI | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320C-25DBI-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320C-3DBI | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320C-3DBI-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16640B-3DBI | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16640B-3DBI-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16640B-25EBLA1 | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16640B-25EBLA1-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16320D-25DBI | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320D-25DBI-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320D-3DBI | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16320D-3DBI-TR | IC DRAM 512MBIT PAR 84TWBGA | |
| IS43DR16640C-3DBI | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16640C-3DBI-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16160B-3DBI-TR | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16640B-25EBLI-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16640B-25EBL-TR | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16160B-3DBI | IC DRAM 256MBIT PAR 84TWBGA | |
| IS43DR16640B-25EBL | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS43DR16640B-25EBLI | IC DRAM 1GBIT PARALLEL 84TWBGA | |
| IS46DR16320D-25DBA2 | IC DRAM 512MBIT PARALLEL 84TWBGA | |
| IS46DR16320C-3DBA2 | IC DRAM 512MBIT PARALLEL 84TWBGA | |
| IS46DR16320D-3DBA2 | IC DRAM 512MBIT PARALLEL 84TWBGA | |
| IS43DR16640B-25DBI | IC DRAM 1GBIT PARALLEL 84TWBGA |
Produkt-Beschreibung
Einzelheiten zum Produkt
Eigenschaften
• Standardspannung: VDD und VDDQ = 1,5 V ± 0,075 V• Niedrigspannung (L): VDD und VDDQ = 1,35 V + 0,1 V, -0,067 V
- Rückwärtskompatibel mit 1,5 V
• Hochgeschwindigkeitsdatenübertragungsraten mit einer Systemfrequenz von bis zu 933 MHz
• 8 interne Banken für den gleichzeitigen Betrieb
• 8n-Bit-Architektur vor dem Abrufen
• Programmierbare CAS-Latenz
• Programmierbare Additive Latenz: 0, CL-1, CL-2
• Programmierbare CAS WRITE-Latenz (CWL) auf Basis von tCK
• Programmierbare Ausbruchlänge: 4 und 8
• Programmierbare Ausbruchssequenz: Sequential oder Interleave
• BL-Schalter im Handumdrehen
• Automatische Selbsterneuerung (ASR)
• Selbstrefresh-Temperatur (SRT)
• Erneuerungszeitraum:
7.8 us (8192 Zyklen/64 ms) Tc= -40°C bis 85°C
3.9 us (8192 Zyklen/32 ms) Tc= 85°C bis 105°C
• Teil-Array Selbsterneuerung
• Asynchrone Rücksetzspalte
• TDQS (Termination Data Strobe) unterstützt (nur x8)
• OCD (Off-Chip-Anpassung der Impedanz des Treibers)
• Dynamische ODT (On-Die Termination)
• Triebkraft: RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Schreiben von Ebenen
• Bis zu 200 MHz im DLL-Ausgeschalteten Modus
• Betriebstemperatur:
Für den Handel (TC = 0°C bis +95°C)
Industrie (TC = -40 °C bis +95 °C)
Fahrzeugtechnik, A1 (TC = -40°C bis +95°C)
Fahrzeugtechnik, A2 (TC = -40°C bis +105°C)
Spezifikationen
| Eigenschaft | Attributivwert |
|---|---|
| Hersteller | ISSI |
| Produktkategorie | Speicher-ICs |
| Hersteller | ISSI |
| Produktkategorie | DRAM |
| RoHS | Einzelheiten |
| Marke | ISSI |
| Hersteller Teil# | Beschreibung | Hersteller | Vergleich |
| USE Gefahrenabweichung Gedächtnis |
DDR DRAM, 64MX16, 0,4ns, CMOS, PBGA84, 8 X 12,50 MM, ROHS-konform, FBGA-84 | Micron Technologie Inc. | IS43DR16640C-25DBL gegen MT47H64M16NF-25E:M |
| USE Gefahrenabweichung Gedächtnis |
DDR DRAM, 64MX16, 0,4ns, CMOS, PBGA84, 8 X 12,50 MM, ROHS-konform, FBGA-84 | Micron Technologie Inc. | IS43DR16640C-25DBL gegen MT47H64M16NF-25EIT:M |
| IS43DR16640C-25DBLA2 Gedächtnis |
DDR DRAM, 64MX16, 0,4ns, CMOS, PBGA84, 8 X 12,50 MM, 1,20 MM HÖHEIT, 0,80 MM PITCH, ohne Blei, TWBGA-84 | Integrierte Siliziumlösungen Inc. | IS43DR16640C-25DBL gegen IS43DR16640C-25DBLA2 |
| IS43DR16640C-25DBLA1 Gedächtnis |
DDR DRAM, 64MX16, 0,4ns, CMOS, PBGA84, 8 X 12,50 MM, 1,20 MM HÖHEIT, 0,80 MM PITCH, ohne Blei, TWBGA-84 | Integrierte Siliziumlösungen Inc. | IS43DR16640C-25DBL gegen IS43DR16640C-25DBLA1 |
Beschreibungen
SDRAM - DDR2-Speicher IC 1 GB (64M x 16) Parallel 400 MHz 400ns 84-TWBGA (8x12.5)
DRAM-Chip DDR2 SDRAM 1Gbit 64Mx16 1,8V 84-Pin TW-BGA
DRAM DDR2,1G,1.8V, RoHs 400MHz, 64Mx16
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